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MT29E6T08ETHBBM5-3ES:B TR

Part No :

MT29E6T08ETHBBM5-3ES:B TR

Manufacturer
Micron Technology
Description
IC FLASH 6TB PARALLEL 333MHZ
Catalog
Memory
DataSheet
MT29E6T08ETHBBM5-3ES:B TR PDF
Unit Price
詢價QQ咨詢
Stock Num
0
Min Qty
1
Package
Tape & Reel (TR)

MT29E6T08ETHBBM5-3ES:B TR Specifications

Type Description
rohs: RoHS
technology: FLASH - NAND
access time: -
memory size: 6Tb (768G x 8)
memory type: Non-Volatile
part status: Active
memory format: FLASH
mounting type: -
package / case: -
clock frequency: 333 MHz
memory interface: Parallel
voltage - supply: 2.5V ~ 3.6V
operating temperature: 0°C ~ 70°C (TA)
supplier device package: -
write cycle time - word, page: -
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