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MT49H64M9CBM-25E:B

Part No :

MT49H64M9CBM-25E:B

Manufacturer
Micron Technology
Description
IC DRAM 576MBIT PARALLEL 144UBGA
Catalog
Memory
DataSheet
MT49H64M9CBM-25E:B PDF
Unit Price
詢價(jià)QQ咨詢
Stock Num
0
Min Qty
1
Package
Bulk

MT49H64M9CBM-25E:B Specifications

Type Description
rohs: RoHS
technology: DRAM
access time: 15 ns
memory size: 576Mb (64M x 9)
memory type: Volatile
part status: Obsolete
memory format: DRAM
mounting type: Surface Mount
package / case: 144-TFBGA
clock frequency: 400 MHz
memory interface: Parallel
voltage - supply: 1.7V ~ 1.9V
operating temperature: 0°C ~ 95°C (TC)
supplier device package: 144-μBGA (18.5x11)
write cycle time - word, page: -
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